Etched track profiles for relativistic 7 GeV silicon and 17.48 GeV Nickel ions in PADC detector: The case study of convex track walls
نویسندگان
چکیده
650 ?m thick PADC foils are exposed to 7 GeV Silicon and 17.48 Nickel accelerated ions at particle fluence of about 1000 cm?2. The relativistic passed through the entire thickness created latent tracks that were etched sequentially under strong etching conditions (NaOH + ethanol). For each time sequence, track profiles found by carefully polishing detector edge, then imaged in order measure their geometrical parameters (diameter length). Track wall curvature study allows for better understanding physico-chemical interactions undertaken during process. Etched have distinctive feature presenting concave walls near aperture. Such special is likely be due a depth dependent variation bulk etch rate (Vb). This dependence investigated discussed. A simulation program has been written based on variational principle, it uses experimentally determined variable Vb constant specific (Vt). Simulations results good agreement with experimental micrographs both qualitatively quantitatively. case may show promise as means fabricating controlled shape pores polymer membranes.
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ژورنال
عنوان ژورنال: Radiation Physics and Chemistry
سال: 2021
ISSN: ['1879-0895', '0969-806X']
DOI: https://doi.org/10.1016/j.radphyschem.2021.109566